Grandway Electronics Limited  

Product Name: Hybrid Module - Philip BGY67A Model NO.: BGY67A Transport Package: 25Pcs/Box, 5Box/Carton Origin: China HS Code: 85176229 Product Description General descriptionHybrid high dynamic range amplifier module in a SOT115J package operating at a voltageSupply of 24 V (DC). FeaturesExcellent linearityExtremely low noiseSilicon nitride passivationRugged constructionTiPtAu metallized crystals ensure optimal reliabilityApplicationsReverse amplifier in two-way CATV systems in the 5 MHz to 200 MHz frequency rangeDefinitionsShort-form specification -The data in a short-form specification is Extracted from a full data sheet with the same type number and title. For Detailed information see the relevant data sheet or data handbook. Limiting values definition -Limiting values given are in accordance with The Absolute Maximum Rating System (IEC 60134). Stress above one or More of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any Other conditions above those given in the Characteristics sections of the Specification is not implied. Exposure to limiting values for extended periods May affect device reliability. Application information -Applications that are described herein for any Of these products are for illustrative purposes only. Philips Semiconductors Make no representation or warranty that such applications will be suitable for The specified use without further testing or modification. DisclaimersLife support -These products are not designed for use in life support Appliances, devices, or systems where malfunction of these products can Reasonably be expected to result in personal injury. Philips Semiconductors Customers using or selling these products for use in such applications do so At their own risk and agree to fully indemnify Philips Semiconductors for any Damages resulting from such application. Right to make changes -Philips Semiconductors reserves the right to Make changes in the products -including circuits, standard cells, and/or Software -described or contained herein in order to improve design and/or Performance. When the product is in full production (status 'Production'), Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no Responsibility or liability for the use of any of these products, conveys no License or title under any patent, copyright, or mask work right to these Products, and makes no representations or warranties that these products are Free from patent, copyright, or mask work right infringement, unless otherwise Specified. QUICK REFERENCE DATATable 1: Quick reference dataSymbol Parameter Conditions Min Typ Max UnitGp power gain f = 10 MHz 23.5 - 24.5 dBItot total current consumption (DC) [1] - 215 230 mA[1] The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 VSymbol P arameter Conditions Min T y p Max Unit G p p o w er gain f = 10 MHz 23.5 - 24.5 dB Symbol P arameter Conditions Min Max Unit V i RF input v oltage - 65 dBmV T stg sto r age tempe r ature - 40 +100 ° C T mb mounting base tempe r ature - 20 +90 ° C